The voltage-sensing domains in voltage-gated K+ channels each contain four transmembrane (TM) segments, termed S1 to S4. Previous scanning mutagenesis studies suggest that S1 and S2 are amphipathic membrane spanning α-helices that interface directly with the lipid membrane. In contrast, the secondary structure of and/or the environments surrounding S3 and S4 are more complex. For S3, although the NH2-terminal part displays significant helical character in both tryptophan- and alanine-scanning mutagenesis studies, the structure of the COOH-terminal portion of this TM is less clear. The COOH terminus of S3 is particularly interesting because this is where gating modifier toxins like Hanatoxin interact with different voltage-gated ion channels. To further examine the secondary structure of the COOH terminus of S3, we lysine-scanned this region in the drk1 K+ channel and examined the mutation-induced changes in channel gating and Hanatoxin binding affinity, looking for periodicity characteristic of an α-helix. Both the mutation-induced perturbation in the toxin–channel interaction and in gating support the presence of an α-helix of at least 10 residues in length in the COOH terminus of S3. Together with previous scanning mutagenesis studies, these results suggest that, in voltage-gated K+ channels, the entire S3 segment is helical, but that it can be divided into two parts. The NH2-terminal part of S3 interfaces with both lipid and protein, whereas the COOH-terminal part interfaces with water (where Hanatoxin binds) and possibly protein. A conserved proline residue is located near the boundary between the two parts of S3, arguing for the presence of a kink in this region. Several lines of evidence suggest that these structural features of S3 probably exist in all voltage-gated ion channels.
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1 March 2001
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February 12 2001
Helical Structure of the Cooh Terminus of S3 and Its Contribution to the Gating Modifier Toxin Receptor in Voltage-Gated Ion Channels
Yingying Li-Smerin,
Yingying Li-Smerin
aMolecular Physiology and Biophysics Unit, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, Maryland 20892
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Kenton J. Swartz
Kenton J. Swartz
aMolecular Physiology and Biophysics Unit, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, Maryland 20892
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Yingying Li-Smerin
,
Kenton J. Swartz
aMolecular Physiology and Biophysics Unit, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, Maryland 20892
Address correspondence to Kenton J. Swartz, Molecular Physiology and Biophysics Unit, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Building 36, Room 2C19, 36 Convent Drive, MSC 4066, Bethesda, MD 20892. Fax: (301) 435-5666; E-mail: [email protected]
Abbreviations used in this paper: α-PI, α-periodicity index; TM, transmembrane.
Received:
October 26 2000
Revision Requested:
January 10 2001
Accepted:
January 11 2001
Online ISSN: 1540-7748
Print ISSN: 0022-1295
© 2001 The Rockefeller University Press
2001
The Rockefeller University Press
J Gen Physiol (2001) 117 (3): 205–218.
Article history
Received:
October 26 2000
Revision Requested:
January 10 2001
Accepted:
January 11 2001
Citation
Yingying Li-Smerin, Kenton J. Swartz; Helical Structure of the Cooh Terminus of S3 and Its Contribution to the Gating Modifier Toxin Receptor in Voltage-Gated Ion Channels. J Gen Physiol 1 March 2001; 117 (3): 205–218. doi: https://doi.org/10.1085/jgp.117.3.205
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