Voltage-gated K+ channels are tetramers with each subunit containing six (S1–S6) putative membrane spanning segments. The fifth through sixth transmembrane segments (S5–S6) from each of four subunits assemble to form a central pore domain. A growing body of evidence suggests that the first four segments (S1–S4) comprise a domain-like voltage-sensing structure. While the topology of this region is reasonably well defined, the secondary and tertiary structures of these transmembrane segments are not. To explore the secondary structure of the voltage-sensing domains, we used alanine-scanning mutagenesis through the region encompassing the first four transmembrane segments in the drk1 voltage-gated K+ channel. We examined the mutation-induced perturbation in gating free energy for periodicity characteristic of α-helices. Our results are consistent with at least portions of S1, S2, S3, and S4 adopting α-helical secondary structure. In addition, both the S1–S2 and S3–S4 linkers exhibited substantial helical character. The distribution of gating perturbations for S1 and S2 suggest that these two helices interact primarily with two environments. In contrast, the distribution of perturbations for S3 and S4 were more complex, suggesting that the latter two helices make more extensive protein contacts, possibly interfacing directly with the shell of the pore domain.
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1 January 2000
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December 28 1999
α-Helical Structural Elements within the Voltage-Sensing Domains of a K+ Channel
Yingying Li-Smerin,
Yingying Li-Smerin
aFrom the Molecular Physiology and Biophysics Unit, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, Maryland 20892
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David H. Hackos,
David H. Hackos
aFrom the Molecular Physiology and Biophysics Unit, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, Maryland 20892
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Kenton J. Swartz
Kenton J. Swartz
aFrom the Molecular Physiology and Biophysics Unit, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, Maryland 20892
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Yingying Li-Smerin
,
David H. Hackos
,
Kenton J. Swartz
aFrom the Molecular Physiology and Biophysics Unit, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, Maryland 20892
Abbreviation used in this paper: α-PI, α-periodicity index.
Received:
August 27 1999
Revision Requested:
October 25 1999
Accepted:
October 29 1999
Online ISSN: 1540-7748
Print ISSN: 0022-1295
© 2000 The Rockefeller University Press
2000
The Rockefeller University Press
J Gen Physiol (2000) 115 (1): 33–50.
Article history
Received:
August 27 1999
Revision Requested:
October 25 1999
Accepted:
October 29 1999
Citation
Yingying Li-Smerin, David H. Hackos, Kenton J. Swartz; α-Helical Structural Elements within the Voltage-Sensing Domains of a K+ Channel. J Gen Physiol 1 January 2000; 115 (1): 33–50. doi: https://doi.org/10.1085/jgp.115.1.33
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