Figure 4.
Microtubules grown in the presence of XMAP215 undergo catastrophe at faster growth rates and with more EB1.(A) Average microtubule end position and EB1 intensity over time. 27 events were averaged along their lifetime for both 0 and 3.13 nM XMAP215 conditions. Average EB1 intensity determined using a 1-s sliding window. Error bars, SEM. (B) Microtubule growth rate at the time of catastrophe determined for each growth event within a 1-s window before catastrophe. 0 nM XMAP215, 4 ± 30 nm/s (mean ± SD, n = 27); 3.13 nM XMAP215, 44 ± 50 nm/s (n = 27). ***, P < 0.001, unpaired Welch’s t test. (C) EB1 intensity at the time of catastrophe. 0 nM XMAP215, 9,000 ± 2,000 a.u. (SD, n = 27); 3.13 nM XMAP215, 12,000 ± 4,000 a.u. (SD, n = 27). **, P = 0.003 unpaired Welch’s t test.

Microtubules grown in the presence of XMAP215 undergo catastrophe at faster growth rates and with more EB1. (A) Average microtubule end position and EB1 intensity over time. 27 events were averaged along their lifetime for both 0 and 3.13 nM XMAP215 conditions. Average EB1 intensity determined using a 1-s sliding window. Error bars, SEM. (B) Microtubule growth rate at the time of catastrophe determined for each growth event within a 1-s window before catastrophe. 0 nM XMAP215, 4 ± 30 nm/s (mean ± SD, n = 27); 3.13 nM XMAP215, 44 ± 50 nm/s (n = 27). ***, P < 0.001, unpaired Welch’s t test. (C) EB1 intensity at the time of catastrophe. 0 nM XMAP215, 9,000 ± 2,000 a.u. (SD, n = 27); 3.13 nM XMAP215, 12,000 ± 4,000 a.u. (SD, n = 27). **, P = 0.003 unpaired Welch’s t test.

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