Concentration dependencies for block and high-affinity suppression of II-V currents. Comparison of best-fit logK_Zn values and 84% confidence limits for the Zn²⁺-induced high- and low-affinity gating changes (left; for definition, see Fig. 11 A) with the values obtained for the low-affinity component of II-V current suppression/block at −50 mV or 10 mV and the high-affinity voltage-independent component of II-V current suppression (right).