Voltage dependence of gating charge movement and gating pore opening of R1C and R2C measured from a holding potential of −80 mV. (A, top) Representative traces of gating currents (left) and gating pore currents (right) measured from a holding potential of −80 mV for R1C. Gating current traces were recorded after a 30-ms prepulse to −150 mV. (bottom) Correlation of charge movement (Q-V: V_1/2 = −102.3 ± 6.9 mV, k = 28.6 ± 1.46 mV; n = 5) and gating pore conductance (G_gp-V: V_1/2 = −160.3 ± 4.5 mV, k = −24.7 ± 3.7 mV; n = 10) of NaChBac R1C. (B, top) Representative traces of gating currents (left) and gating pore currents (right) measured from a holding potential of −80 mV for R2C. (bottom) Correlation of charge movement (Q-V: V_1/2 = −95.2 ± 0.4, k = 17 ± 0.8 mV; n = 4) and gating pore conductance (G_gp-V: V_1/2 = −151.9 ± 3.9 mV, k = −24.5 ± 3.6 mV; n = 6) of NaChBac R2C. R1C data from A are shown here as dashed lines for comparison. Error bars represent SEM.