Figure 1.
Figure 1. Mutation of I696 and W697 differentially affect voltage-dependent gating or TRPV1. (A) Amino acid sequence of the TRP domain of TRPV1; the residues of the TRP box are highlighted in bold, and “a” and “d” denote the positions in the predicted coiled-coil structure. (B) Family of ionic currents of representative I696X mutants, wild-type channels, and mock-transfected cells. (C) Current density at 240 mV measured for all I696X mutants using the step-voltage protocol. (D) Family of ion channel recordings evoked from representative W697X mutants. (E) Current density at 240 mV measured for all W697X mutants. The step-voltage paradigm consisted of 100-ms voltage pulses from −120 mV to 240 mV in steps of 10 mV from a holding of 0 mV and a repolarization to −60 mV (B, inset). Broken lines represent the background current density of mock-tranfected cells at 240 mV. Data are given as mean ± SEM (error bars), with n (number of cells) ≥ 6.

Mutation of I696 and W697 differentially affect voltage-dependent gating or TRPV1. (A) Amino acid sequence of the TRP domain of TRPV1; the residues of the TRP box are highlighted in bold, and “a” and “d” denote the positions in the predicted coiled-coil structure. (B) Family of ionic currents of representative I696X mutants, wild-type channels, and mock-transfected cells. (C) Current density at 240 mV measured for all I696X mutants using the step-voltage protocol. (D) Family of ion channel recordings evoked from representative W697X mutants. (E) Current density at 240 mV measured for all W697X mutants. The step-voltage paradigm consisted of 100-ms voltage pulses from −120 mV to 240 mV in steps of 10 mV from a holding of 0 mV and a repolarization to −60 mV (B, inset). Broken lines represent the background current density of mock-tranfected cells at 240 mV. Data are given as mean ± SEM (error bars), with n (number of cells) ≥ 6.

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