Global (capacitance) analysis of Monte Carlo–simulated gating currents for Scheme 4. Integrated gating currents from 10 voltage-ramp experiments are shown as thin lines for [Ca²⁺]_i = 10⁻³ and 10³ µM, and normalized to a maximum value of Δq_T = 2.56 e_o (mean value derived from charge-per-channel simulations). The two thicker and smoother lines correspond to a single experiment performed in the absence of Nyquist noise. The numerically derived 〈q〉-V curves (thick dashed lines) superimposed onto the data are normalized to the exact value of Δq_T = 2.62 e_o. The area of the dashed rectangle is −Δq_T ^μΔV_M = −4(ΔW_C + ΔW_E). Simulation conditions were f_s = 5 kHz and f_c = 1 kHz.