Scheme I predicts the voltage dependence of the 1-D distributions at 20°C. 2-D dwell-time distributions obtained at 40, 60, 80, 100, 120, and 140 mV were simultaneously fitted with scheme I to obtain the most likely rate constants and their voltage dependence for this scheme. Scheme I with this single set of parameters was then used to predict the 1-D open and closed dwell-time distributions for each of the indicated voltages. The predicted distributions (solid lines) gave excellent descriptions of the experimental dwell-time histograms. The plots have been normalized to a fixed number of events (70,000) to allow for easier comparison between different voltages, and a moving bin mean has been used to reduce stochastic variation in the histogram. The initial rate constants and voltage sensitivities (in units of elementary charge) were O1-C3 = 7,834 s⁻¹ (−0.334), C3-O1 = 6,140 s⁻¹ (0.105), O2-C4 = 11,054 s⁻¹ (−0.408), C4-O2 = 199 s⁻¹ (0.163), C3-C4 = 1,719 s⁻¹ (0.049), C4-C3 = 265 s⁻¹ (0.288), C4-C5 = 159 s⁻¹ (0.122), C5-C4 = 177 s⁻¹ (0.296), C5-C6 = 46.1 s⁻¹ (0.008), C6-C5 = 51.5 s⁻¹ (0.148), C6-C7 = 0.521 s⁻¹ (0.311), and C7-C6 = 0.609 s⁻¹ (−0.207).