Figure 1.
Figure 1. Effect of Cd2+ on hERG1 channel gating currents. (A) Currents recorded at a Vt of +60 mV using the COVG technique from an uninjected oocyte before (control) and 10 min after bath application of 30 µM Cd2+. Recordings were made with the same solutions used to record gating currents in oocytes expressing hERG1 channels. (B and C) Gating currents recorded at the indicated Vt before and after treatment of the same oocyte with 30 µM Cd2+. Bottom panels illustrate voltage clamp protocol used to elicit gating currents shown in panels A–C.

Effect of Cd2+ on hERG1 channel gating currents. (A) Currents recorded at a Vt of +60 mV using the COVG technique from an uninjected oocyte before (control) and 10 min after bath application of 30 µM Cd2+. Recordings were made with the same solutions used to record gating currents in oocytes expressing hERG1 channels. (B and C) Gating currents recorded at the indicated Vt before and after treatment of the same oocyte with 30 µM Cd2+. Bottom panels illustrate voltage clamp protocol used to elicit gating currents shown in panels A–C.

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