Figure 2.
Figure 2. The domain 2 S3/S4 linker determines how Tz1 modifies NaV channel gating. (A) Pulse protocol used to elicit currents at potentials ranging from −110 to 60 mV in steps of 10 mV. IV1 denotes a first series of test potentials, and IV2 is a second test potential series applied after a 50-ms conditioning prepulse to −10 mV. (B–E; left) Representative current–voltage plots before (open circles) and after the application of 5 µM Tz1 (closed symbols) without (gray) or with (black) a preceding prepulse. Control data are shown without a prepulse, as they are indistinguishable from those with a prepulse. Continuous curves are data fits according to Eq. 1. (Right) Current traces from the same experiments as shown on the left obtained at the indicated potentials in the absence (thin black) and presence of Tz1 without (gray) and with (thick black) a prepulse. Experiments were performed for NaV1.4 (B), NaV1.4–G658N (C), NaV1.5 (D), and NaV1.5–N803G (E).

The domain 2 S3/S4 linker determines how Tz1 modifies NaV channel gating. (A) Pulse protocol used to elicit currents at potentials ranging from −110 to 60 mV in steps of 10 mV. IV1 denotes a first series of test potentials, and IV2 is a second test potential series applied after a 50-ms conditioning prepulse to −10 mV. (B–E; left) Representative current–voltage plots before (open circles) and after the application of 5 µM Tz1 (closed symbols) without (gray) or with (black) a preceding prepulse. Control data are shown without a prepulse, as they are indistinguishable from those with a prepulse. Continuous curves are data fits according to Eq. 1. (Right) Current traces from the same experiments as shown on the left obtained at the indicated potentials in the absence (thin black) and presence of Tz1 without (gray) and with (thick black) a prepulse. Experiments were performed for NaV1.4 (B), NaV1.4–G658N (C), NaV1.5 (D), and NaV1.5–N803G (E).

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