Figure 6.
Gating pore currents were detected for R897S and R900G, but not R900S, mutant channels. (A) Representative traces are shown for currents recorded in response to test potentials of −140 to 20 mV in 10-mV increments from a holding potential of −100 mV. The initial capacitance transient is clipped, and the time-averaged current from 5 to 7.5 ms (boxes) was examined to test for the presence of a gating pore current. No leak subtraction was performed, and no hCaV1.1 channel blockers were present. Notice the larger-amplitude inward holding current at −100 mV for R900G and R897S mutants. (B) The isochronal I-V relationship shows larger inward currents at hyperpolarized test potentials for R900G and R897S, consistent with a gating pore current. Error bars indicate the SEM.

Gating pore currents were detected for R897S and R900G, but not R900S, mutant channels. (A) Representative traces are shown for currents recorded in response to test potentials of −140 to 20 mV in 10-mV increments from a holding potential of −100 mV. The initial capacitance transient is clipped, and the time-averaged current from 5 to 7.5 ms (boxes) was examined to test for the presence of a gating pore current. No leak subtraction was performed, and no hCaV1.1 channel blockers were present. Notice the larger-amplitude inward holding current at −100 mV for R900G and R897S mutants. (B) The isochronal I-V relationship shows larger inward currents at hyperpolarized test potentials for R900G and R897S, consistent with a gating pore current. Error bars indicate the SEM.

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