Table 1.
Voltage gating parameters, V0 and n, of mVDAC3 and mVDAC1
Positive potentialNegative potential
V0(mV)nV0(mV)n
VDAC1 WT (7) 28.6 ± 1.4 3.9 ± 0.5 28.7 ± 1.9 3.6 ± 0.3 
VDAC3 WT (11) 25.4 ± 3.9 3.3 ± 0.5 26.3 ± 4.7 3.4 ± 0.3 
Positive potentialNegative potential
V0(mV)nV0(mV)n
VDAC1 WT (7) 28.6 ± 1.4 3.9 ± 0.5 28.7 ± 1.9 3.6 ± 0.3 
VDAC3 WT (11) 25.4 ± 3.9 3.3 ± 0.5 26.3 ± 4.7 3.4 ± 0.3 

V0, the voltage at which half of the channels are open, and n, the effective gating charge, are the fitting parameters from Fig. 3 B. Data are means ± SD, with the number of experiments indicated in parentheses.

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