Table 1. Voltage dependent gating and... | Rockefeller University Press

Table 1.

Voltage dependent gating and free energies of channel gating for I696X and W697X in the presence of 1 µM capsaicin

Channel	V_0.5^a	z_g^a	g_max^a	P_min^b	ΔG_o(I)^c	ΔG_o(V)^d	ΔG_o^e
	mV		nS		kcal/mol	kcal/mol	kcal/mol
TRPV1	−22 ± 5	0.62 ± 0.08	124 ± 7	0.32 ± 0.01	0.20 ± 0.08	−0.29 ± 0.06	0.23 ± 0.12
I696A	100 ± 10	0.68 ± 0.09	60 ± 7	0.003 ± 0.06	3.26 ± 0.38	1.56 ± 0.19	4.83 ± 0.79
I696V	81 ± 6	0.62 ± 0.07	77 ± 15	0.08 ± 0.05	1.43 ± 0.13	1.16 ± 0.10	2.59 ± 0.29
I696L	78 ± 8	0.64 ± 0.09	86 ± 10	0.08 ± 0.07	1.42 ± 0.07	1.16 ± 0.18	2.28 ± 0.38
I696M	87 ± 7	0.74 ± 0.07	79 ± 9	0.01 ± 0.11	2.69 ± 0.29	1.48 ± 0.15	4.20 ± 0.48
I696H	65 ± 9	0.65 ± 0.06	70 ± 8	0.08 ± 0.04	1.43 ± 0.18	0.97 ± 0.13	2.40 ± 0.39
W697Y	68 ± 7	0.90 ± 0.2	67 ± 16	0.40 ± 0.04	0.21 ± 0.05	1.34 ± 0.08	1.55 ± 0.11
W697H	69 ± 9	0.87 ± 0.3	62 ± 12	0.25 ± 0.03	0.64 ± 0.04	1.36 ± 0.11	2.00 ± 0.18
W697V	68 ± 6	0.88 ± 0.3	30 ± 6	0.23 ± 0.05	0.70 ± 0.05	1.33 ± 0.12	2.03 ± 0.20
W697D	68 ± 4	0.71 ± 0.1	133 ± 11	0.09 ± 0.02	1.34 ± 0.10	1.25 ± 0.14	2.59 ± 0.44
W697N	73 ± 8	0.75 ± 0.2	106 ± 13	0.03 ± 0.01	2.06 ± 0.07	1.26 ± 0.13	3.32 ± 0.34

Channel	V_0.5^a	z_g^a	g_max^a	P_min^b	ΔG_o(I)^c	ΔG_o(V)^d	ΔG_o^e
	mV		nS		kcal/mol	kcal/mol	kcal/mol
TRPV1	−22 ± 5	0.62 ± 0.08	124 ± 7	0.32 ± 0.01	0.20 ± 0.08	−0.29 ± 0.06	0.23 ± 0.12
I696A	100 ± 10	0.68 ± 0.09	60 ± 7	0.003 ± 0.06	3.26 ± 0.38	1.56 ± 0.19	4.83 ± 0.79
I696V	81 ± 6	0.62 ± 0.07	77 ± 15	0.08 ± 0.05	1.43 ± 0.13	1.16 ± 0.10	2.59 ± 0.29
I696L	78 ± 8	0.64 ± 0.09	86 ± 10	0.08 ± 0.07	1.42 ± 0.07	1.16 ± 0.18	2.28 ± 0.38
I696M	87 ± 7	0.74 ± 0.07	79 ± 9	0.01 ± 0.11	2.69 ± 0.29	1.48 ± 0.15	4.20 ± 0.48
I696H	65 ± 9	0.65 ± 0.06	70 ± 8	0.08 ± 0.04	1.43 ± 0.18	0.97 ± 0.13	2.40 ± 0.39
W697Y	68 ± 7	0.90 ± 0.2	67 ± 16	0.40 ± 0.04	0.21 ± 0.05	1.34 ± 0.08	1.55 ± 0.11
W697H	69 ± 9	0.87 ± 0.3	62 ± 12	0.25 ± 0.03	0.64 ± 0.04	1.36 ± 0.11	2.00 ± 0.18
W697V	68 ± 6	0.88 ± 0.3	30 ± 6	0.23 ± 0.05	0.70 ± 0.05	1.33 ± 0.12	2.03 ± 0.20
W697D	68 ± 4	0.71 ± 0.1	133 ± 11	0.09 ± 0.02	1.34 ± 0.10	1.25 ± 0.14	2.59 ± 0.44
W697N	73 ± 8	0.75 ± 0.2	106 ± 13	0.03 ± 0.01	2.06 ± 0.07	1.26 ± 0.13	3.32 ± 0.34

The parameter values obtained from the best fit of the g-V curves to a Boltzmann distribution (Figs. 5 B and 6 A). Free energies were estimated assuming a two-state gating model.

P_min denotes the normalized conductance at hyperpolarized potentials (g_min/g_max), where g_min has been obtained for the best fit of the g-V curve to a Boltzmann distribution.

The free energy of the voltage-independent component, obtained as –RT ln[(P_min/(1 − P_min)].

The free energy of the voltage-dependent component, obtained as z_gFV_0.5.

The total free energy of the gating process, obtained as ΔG_o(I) + ΔG_o(V).

Data are given as mean ± SEM, with n ≥ 5.

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