Table 4. Boltzmann fits to F-V curves... | Rockefeller University Press

Table 4.

Boltzmann fits to F-V curves

Channel variant	A₁	B₁	C₁	A₂	B₂	C₂	D
DI	0.73	0.0067	12.13	1.44	0.005	31.8	−1.1
DII	0.43	0.0087	10.99	0.98	0.052	36.3	−0.4
DIII	0.43	0.0001	8.16	0.70	0.010	20.7	−0.1
DIV	0.81	0.0062	12.76	1.57	0.008	41.47	−1.4

Channel variant	A₁	B₁	C₁	A₂	B₂	C₂	D
DI	0.73	0.0067	12.13	1.44	0.005	31.8	−1.1
DII	0.43	0.0087	10.99	0.98	0.052	36.3	−0.4
DIII	0.43	0.0001	8.16	0.70	0.010	20.7	−0.1
DIV	0.81	0.0062	12.76	1.57	0.008	41.47	−1.4

For F-V curves, two Boltzmann functions fit the curve well: $\sum_{i = 1}^{2} \frac{A_{i}}{1 + B_{i} e^{- V_{m} / C_{i}}} + D .$ In each case, only one Boltzmann described voltage dependence above −100 mV. To derive the steady-state activated probability for modeling purposes, A₁ was set to 1 and D to 0. The values predicted by this normalized function, which used B₁ and C₁, were used to calculate the steady-state occupancy. Channel variant abbreviations as in Table 1.

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