Table 3.

Boltzmann fits to F-V curves

Channel variant A1 B1 C1 A2 B2 C2 
L689I DI 0.53 0.01677 15.01 2.81 0.1601 137.7 −2.04 
L689I DII 0.16 0.00003 6.07 1.04 0.0707 28.4 −0.19 
L689I DIII 0.74 0.00001 6.58 0.41 0.0002 12.9 −0.19 
L689I DIV 0.21 0.000001 4.23 0.87 0.0075 18.0 −0.11 
Channel variant A1 B1 C1 A2 B2 C2 
L689I DI 0.53 0.01677 15.01 2.81 0.1601 137.7 −2.04 
L689I DII 0.16 0.00003 6.07 1.04 0.0707 28.4 −0.19 
L689I DIII 0.74 0.00001 6.58 0.41 0.0002 12.9 −0.19 
L689I DIV 0.21 0.000001 4.23 0.87 0.0075 18.0 −0.11 

For F-V curves, two Boltzmann functions fit the curve well: i=12Ai1+BieVm/Ci+D. In each case, only one Boltzmann described voltage dependence above −100 mV. To derive the steady-state activated probability for modeling purposes, A was set to 1 and D to 0. The values predicted by this normalized function were used to calculate the steady-state occupancy. Channel variant abbreviations as in Table 1.

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