Table III.

Gating parameters determined from four BKB channels as mean ± SEM

Parameter Scheme IV Scheme IVF Scheme V Scheme VF 
A (s−1369 ± 163 384 ± 159 240 ± 136 397 ± 197 
qA (eo0.470 ± 0.075 0.290 ± 0.075 0.355 ± 0.057 0.247 ± 0.063 
B (s−1752 ± 215 1,090 ± 240 2,570 ± 1,190 1,700 ± 445 
qB (eo−0.156 ± 0.090 −0.261 ± 0.074 −0.106 ± 0.053 −0.206 ± 0.077 
H (s−10.310 ± 0.196 0.824 ± 0.760 1.19 ± 0.569 1.23 ± 0.864 
qH (eo0.197 ± 0.130 0.316 ± 0.064 0.116 ± 0.067 0.150 ± 0.090 
K (s−14,540 ± 1,250 5,030 ± 1,960 3,450 ± 1,160 2,030 ± 687 
qK (eo−0.217 ± 0.091 −0.218 ± 0.052 −0.225 ± 0.103 −0.294 ± 0.142 
D 22.9 ± 3.98 28.3 ± 2.15 17.9 ± 1.90 17.4 ± 2.20 
E 0.997 ± 0.080 0.990 ± 0.097 1.37 ± 0.06 1.48 ± 0.061 
U   4.13 ± 1.62 5.02 ± 3.24 
W   1.31 ± 0.50 1.34 ± 0.39 
HF (s−1 621 ± 88.6  603 ± 276 
KF (s−1 21,200 ± 3,070  35,600 ± 19,600 
qG (eo2.92 ± 0.59 2.74 ± 0.07 2.18 ± 0.15 2.26 ± 0.17 
Parameter Scheme IV Scheme IVF Scheme V Scheme VF 
A (s−1369 ± 163 384 ± 159 240 ± 136 397 ± 197 
qA (eo0.470 ± 0.075 0.290 ± 0.075 0.355 ± 0.057 0.247 ± 0.063 
B (s−1752 ± 215 1,090 ± 240 2,570 ± 1,190 1,700 ± 445 
qB (eo−0.156 ± 0.090 −0.261 ± 0.074 −0.106 ± 0.053 −0.206 ± 0.077 
H (s−10.310 ± 0.196 0.824 ± 0.760 1.19 ± 0.569 1.23 ± 0.864 
qH (eo0.197 ± 0.130 0.316 ± 0.064 0.116 ± 0.067 0.150 ± 0.090 
K (s−14,540 ± 1,250 5,030 ± 1,960 3,450 ± 1,160 2,030 ± 687 
qK (eo−0.217 ± 0.091 −0.218 ± 0.052 −0.225 ± 0.103 −0.294 ± 0.142 
D 22.9 ± 3.98 28.3 ± 2.15 17.9 ± 1.90 17.4 ± 2.20 
E 0.997 ± 0.080 0.990 ± 0.097 1.37 ± 0.06 1.48 ± 0.061 
U   4.13 ± 1.62 5.02 ± 3.24 
W   1.31 ± 0.50 1.34 ± 0.39 
HF (s−1 621 ± 88.6  603 ± 276 
KF (s−1 21,200 ± 3,070  35,600 ± 19,600 
qG (eo2.92 ± 0.59 2.74 ± 0.07 2.18 ± 0.15 2.26 ± 0.17 

D, E, U, and W are without units. qG = net gating charge = 4qA − 4qB + qHqK. The gating parameters are absent in the indicated kinetic schemes (blank cells).

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