Voltage dependence of individual BKB channels
| Channel | V0.5 | Millivolts per e-fold change in Poa | qG (eo)b | Pomax |
| mV | ||||
| DM1 | 22.9 | 13.4 | 1.90 | 0.95 |
| DM2 | 29.0 | 12.5 | 2.04 | 0.94 |
| DM3 | 23.0 | 9.1 | 2.80 | 0.94 |
| DM4 | 48.0 | 10.6 | 2.41 | 0.92 |
| Mean | 30.7 ± 5.9 | 11.4 ± 1.0 | 2.29 ± 0.20 | 0.94 ± 0.1 |
| Channel | V0.5 | Millivolts per e-fold change in Poa | qG (eo)b | Pomax |
| mV | ||||
| DM1 | 22.9 | 13.4 | 1.90 | 0.95 |
| DM2 | 29.0 | 12.5 | 2.04 | 0.94 |
| DM3 | 23.0 | 9.1 | 2.80 | 0.94 |
| DM4 | 48.0 | 10.6 | 2.41 | 0.92 |
| Mean | 30.7 ± 5.9 | 11.4 ± 1.0 | 2.29 ± 0.20 | 0.94 ± 0.1 |
The means ± SEM are presented in the bottom row.
The voltage sensitivity is defined as the voltage change (in millivolts) required for an e-fold change in Po.
Effective gating charge qG = kBT/(millivolts per e-fold change in Po), where kB is Boltzmann's constant, T is absolute temperature, and kBT = 25.5 (millivolts eo) at 23°C.