Table 2.
Gating charge displacement
hCaV1.1 constructQmax (nC)V1/2 (mV)k (mV)
WT (n = 8)a 0.69 ± 0.060 −5.6 ± 1.5 19 ± 0.61 
R897S (n = 8) 0.35 ± 0.062b −27 ± 1.9b 16 ± 0.70c 
R900G (n = 8) 0.34 ± 0.028b −10 ± 1.7 19 ± 1.1 
R900S (n = 10) 0.34 ± 0.054b −5.5 ± 1.6 17 ± 0.93 
hCaV1.1 constructQmax (nC)V1/2 (mV)k (mV)
WT (n = 8)a 0.69 ± 0.060 −5.6 ± 1.5 19 ± 0.61 
R897S (n = 8) 0.35 ± 0.062b −27 ± 1.9b 16 ± 0.70c 
R900G (n = 8) 0.34 ± 0.028b −10 ± 1.7 19 ± 1.1 
R900S (n = 10) 0.34 ± 0.054b −5.5 ± 1.6 17 ± 0.93 
a

Data reproduced from Wu et al., 2018.

b

P < 0.001 compared with WT (ANOVA).

c

P < 0.05 compared with WT (ANOVA).

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