Various experiments have suggested that the S4 segment in voltage-dependent Na+ and K+ channels is in contact with a solvent-accessible cavity. We explore the consequences of the existence of such a cavity through the electrostatic effects on the gating currents of Shaker K+ channels under conditions of reduced ionic strength S. We observe that ∼10-fold reductions of intracellular S produce reductions of the measured gating charge of ∼10%. These effects continue at even lower values of S. The reduction of gating charge when S is reduced by 10-fold at the extracellular surface is much smaller (∼2%). Shifts of the Q(V) curve because of a reduced S are small (<10 mV in size), which is consistent with very little fixed surface charge. Continuum electrostatic calculations show that the S effects on gating charge can be explained by the alteration of the local potential in an intracellular conical cavity of 20–24-Å depth and 12-Å aperture, and a smaller extracellular cavity of 3-Å depth and the same aperture. In this case, the attenuation of the membrane potential at low S leads to reduction of the apparent gating charge. We suggest that this cavity is made by a bundle of transmembrane helices, and that the gating charge movement occurs by translocation of charged residues across a thin septum of ∼3–7 Å thickness.
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1 January 2001
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January 01 2001
Electrostatics and the Gating Pore of Shaker Potassium Channels
Leon D. Islas,
Leon D. Islas
aDepartment of Cellular and Molecular Physiology, Yale University School of Medicine, New Haven, Connecticut 06520
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Fred J. Sigworth
Fred J. Sigworth
aDepartment of Cellular and Molecular Physiology, Yale University School of Medicine, New Haven, Connecticut 06520
Search for other works by this author on:
Leon D. Islas
aDepartment of Cellular and Molecular Physiology, Yale University School of Medicine, New Haven, Connecticut 06520
Fred J. Sigworth
aDepartment of Cellular and Molecular Physiology, Yale University School of Medicine, New Haven, Connecticut 06520
Received:
July 11 2000
Revision Requested:
November 09 2000
Accepted:
December 05 2000
Online ISSN: 1540-7748
Print ISSN: 0022-1295
© 2001 The Rockefeller University Press
2001
The Rockefeller University Press
J Gen Physiol (2001) 117 (1): 69–90.
Article history
Received:
July 11 2000
Revision Requested:
November 09 2000
Accepted:
December 05 2000
Citation
Leon D. Islas, Fred J. Sigworth; Electrostatics and the Gating Pore of Shaker Potassium Channels . J Gen Physiol 1 January 2001; 117 (1): 69–90. doi: https://doi.org/10.1085/jgp.117.1.69
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