The highly charged transmembrane segments in each of the four homologous domains (S4D1–S4D4) represent the principal voltage sensors for sodium channel gating. Hitherto, the existence of a functional specialization of the four voltage sensors with regard to the control of the different gating modes, i.e., activation, deactivation, and inactivation, is problematic, most likely due to a functional coupling between the different domains. However, recent experimental data indicate that the voltage sensor in domain 4 (S4D4) plays a unique role in sodium channel fast inactivation. The correlation of fast inactivation and the movement of the S4D4 voltage sensor in rat brain IIA sodium channels was examined by site-directed mutagenesis of the central arginine residues to histidine and by analysis of both ionic and gating currents using a high expression system in Xenopus oocytes and an optimized two-electrode voltage clamp. Mutation R1635H shifts the steady state inactivation to more hyperpolarizing potentials and drastically increases the recovery time constant, thereby indicating a stabilized inactivated state. In contrast, R1638H shifts the steady state inactivation to more depolarizing potentials and strongly increases the inactivation time constant, thereby suggesting a preferred open state occupancy. The double mutant R1635/1638H shows intermediate effects on inactivation. In contrast, the activation kinetics are not significantly influenced by any of the mutations. Gating current immobilization is markedly decreased in R1635H and R1635/1638H but only moderately in R1638H. The time courses of recovery from inactivation and immobilization correlate well in wild-type and mutant channels, suggesting an intimate coupling of these two processes that is maintained in the mutations. These results demonstrate that S4D4 is one of the immobilized voltage sensors during the manifestation of the inactivated state. Moreover, the presented data strongly suggest that S4D4 is involved in the control of fast inactivation.
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1 August 1999
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August 01 1999
Movement of Voltage Sensor S4 in Domain 4 Is Tightly Coupled to Sodium Channel Fast Inactivation and Gating Charge Immobilization
Frank J.P. Kühn,
Frank J.P. Kühn
aFrom the Physiologisches Institut, Universität Zürich, CH-8057 Zürich, Switzerland
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Nikolaus G. Greeff
Nikolaus G. Greeff
aFrom the Physiologisches Institut, Universität Zürich, CH-8057 Zürich, Switzerland
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Frank J.P. Kühn
aFrom the Physiologisches Institut, Universität Zürich, CH-8057 Zürich, Switzerland
Nikolaus G. Greeff
aFrom the Physiologisches Institut, Universität Zürich, CH-8057 Zürich, Switzerland
1used in this paper: cRNA, complementary RNA; ENa, sodium reversal potential; Ig,n, non-immobilized gating current fraction; Ig,t, total gating current fraction; rBIIA, rat brain IIA; Rs, series resistance; TEVC, two-electrode voltage clamp; TTX, tetrodotoxin; WT, wild-type
Received:
March 18 1999
Revision Requested:
May 17 1999
Accepted:
May 27 1999
Online ISSN: 1540-7748
Print ISSN: 0022-1295
© 1999 The Rockefeller University Press
1999
The Rockefeller University Press
J Gen Physiol (1999) 114 (2): 167–184.
Article history
Received:
March 18 1999
Revision Requested:
May 17 1999
Accepted:
May 27 1999
Citation
Frank J.P. Kühn, Nikolaus G. Greeff; Movement of Voltage Sensor S4 in Domain 4 Is Tightly Coupled to Sodium Channel Fast Inactivation and Gating Charge Immobilization. J Gen Physiol 1 August 1999; 114 (2): 167–184. doi: https://doi.org/10.1085/jgp.114.2.167
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